Rohm Semiconductor has developed a compact, high-efficiency 20-V N-channel MOSFET in a DSN1006-3 WLCSP (1.0 × 0.6 mm) package, delivering greater miniaturization for small, thin devices, including ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...
Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...
A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...
Sumitomo Metal Mining Co., Ltd. (SMMYY, STMNF, 5713.T) on Monday announced that its direct bonded silicon carbide substrate, ...
Two new MOSFET devices developed by ON Semiconductor are aimed at mobile-device Li-ion battery charging and discharging protection circuit switching. Two new MOSFET devices developed by ON ...
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